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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
PA2782GR
SWITCHING N-CHANNEL POWER MOS FET/SCHOTTKY BARRIER DIODE
DESCRIPTION
The PA2782GR is N-Channel Power MOSFET, which built a Schottky Barrier Diode inside. This product is designed for synchronous DC/DC converter application.
PACKAGE DRAWING (Unit: mm)
8 5 1, 2, 3 ; Source 4 ; Gate 5, 6, 7, 8 ; Drain
FEATURES
* Built a Schottky Barrier Diode * Low on-state resistance RDS(on)1 = 11 m TYP. (VGS = 10 V, ID = 5.5 A) RDS(on)2 = 16 m TYP. (VGS = 4.5 V, ID = 5.5 A) RDS(on)3 = 19 m TYP. (VGS = 4.0 V, ID = 5.5 A) * Low Ciss: Ciss = 660 pF TYP. * Small and surface mount package (Power SOP8)
1 4 5.37 MAX.
+0.10 -0.05
6.0 0.3 4.4 0.8
1.8 MAX.
1.44
0.15
0.05 MIN.
0.5 0.2 0.10
1.27 0.78 MAX. 0.40
+0.10 -0.05
ORDERING INFORMATION
PART NUMBER PACKAGE Power SOP8
0.12 M
PA2782GR
ABSOLUTE MAXIMUM RATINGS (TA = 25C. All terminals are connected.)
Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) [MOSFET] Drain Current (pulse)
Note1 Note2
EQUIVALENT CIRCUIT
Drain
VDSS VGSS ID(DC) ID(pulse)
30 20 11 44 2.5 2 1 150
V V A A A W W C C
Gate Protection Diode Source Gate Schottky Diode
Average Forward Current Total Power Dissipation Total Power Dissipation
[SCHOTTKY]
IF(AV) PT PT Tch, Tj
Note3 Note3
[MOSFET] [SCHOTTKY]
Channel & Junction Temperature
Storage Temperature Tstg -55 to + 150 Notes 1. PW 10 s, Duty Cycle 1% 2. Rectangle wave, 50% Duty Cycle 2 3. Mounted on ceramic substrate of 1200 mm x 2.2 mm
Caution Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately degrade the device operation. Steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate it once, when it has occurred. Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information.
Document No. G16421EJ1V0DS00 (1st edition) Date Published April 2003 NS CP(K) Printed in Japan
2002
PA2782GR
ELECTRICAL CHARACTERISTICS (TA = 25C, unless other wise noted. All terminals are connected.)
CHARACTERISTICS Zero Gate Voltage Drain Current
Note
SYMBOL IDSS
TEST CONDITIONS VDS = 24 V, VGS = 0 V VDS = 24 V, VGS = 0 V, TA = 125C
MIN.
TYP.
MAX. 50 10 10
UNIT
A
mA
Gate Leakage Current Gate Cut-off Voltage Drain to Source On-state Resistance
Note
IGSS VGS(off) RDS(on)1 RDS(on)2 RDS(on)3
VGS = 20 V, VDS = 0 V VDS = 10 V, ID = 1 mA VGS = 10 V, ID = 5.5 A VGS = 4.5 V, ID = 5.5 A VGS = 4.0 V, ID = 5.5 A VDS = 10 V VGS = 0 V f = 1 MHz VDD = 15 V, ID = 5.5 A VGS = 10 V RG = 10 1.0 11 16 19 660 340 83 9 5 29 6 VDD = 15 V VGS = 5 V ID = 11 A IF = 1 A, VGS = 0 V IF = 1 A, VGS = 0 V, TA = 125C 7.1 2.1 3.1 0.45 0.37 25 14
A
V m m m pF pF pF ns ns ns ns nC nC nC
2.5 15 22.5 29
Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage
Note
Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D)
0.5
V V ns nC
Reverse Recovery Time Reverse Recovery Charge
trr Qrr
IF = 7 A, VGS = 0 V di/dt = 100 A/s
Note Pulsed: PW 350 s, Duty Cycle 2%
TEST CIRCUIT 1 SWITCHING TIME TEST CIRCUIT 2 GATE CHARGE
D.U.T. RL VGS PG. RG
Wave Form
D.U.T. VGS
0 10% VGS 90%
IG = 2 mA 50
RL VDD
VDD
PG.
90%
VDS
90% 10% 10%
VGS 0 = 1 s Duty Cycle 1%
VDS
VDS
Wave Form
0 td(on) ton
tr
td(off) toff
tf
2
Data Sheet G16421EJ1V0DS
PA2782GR
TYPICAL CHARACTERISTICS (TA = 25C. All terminals are connected.)
DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA dT - Percentage of Rated Power - %
120
TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE
2.8
PT - Total Power Dissipation - W
100
2.4 2 1.6 1.2 0.8 0.4 0
Mounted on ceramic substrate of 2 1200 mm x 2.2 mm MOSFET
80
60
SCHOTTKY
40
20
0 0 25 50 75 100 125 150 175
0
20
40
60
80
100
120
140
160
TA - Ambient Temperature - C
TA - Ambient Temperature - C
FORWARD BIAS SAFE OPERATING AREA
100 ID(pulse) ID(DC) 10 DC 1 RDS(on) Limited (at VGS = 10 V) 100 ms Power Dissipation Limited 0.1 Single pulse Mounted on ceramic substrate of 2 1200 mm x 2.2 mm 0.01 0.01 0.1 1 10 100 10 ms PW = 100 s 1 ms
ID - Drain Current - A
VDS - Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH (MOSFET)
1000
Rth(t) - Transient Thermal Resistance - C/W
100
Rth(ch-A) = 62.5C/W
10
1 Mounted on ceramic substrate of 1200 mm x 2.2 mm Single pulse 0.1 1m
10 m 100 m 1 10 100 1000
2
PW - Pulse Width - s
Data Sheet G16421EJ1V0DS
3
PA2782GR
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH (SCHOTTKY)
1000
Rth(t) - Transient Thermal Resistance - C/W
Rth(j-A) = 125C/W 100
10
1
Mounted on ceramic substrate of 1200 mm x 2.2 mm Single pulse
2
0.1 1m
10 m
100 m
1
10
100
1000
PW - Pulse Width - s DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE
50 Pulsed 45 3 VDS = 10 V ID = 1 mA
GATE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE
VGS(off) - Gate Cut-off Voltage - V
ID - Drain Current - A
40 VGS = 10 V 35 30 25 20 15 10 5 0 0 0.5 1 1.5 2 4.5 V
2.5
2
4.0 V
1.5
1
0.5
0 - 50
0
50
100
150
VDS - Drain to Source Voltage - V
Tch - Channel Temperature - C
RDS(on) - Drain to Source On-state Resistance - m
30 Pulsed 25 VGS = 4.0 V 4.5 V 15 10 V 10
RDS(on) - Drain to Source On-state Resistance - m
DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT
DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE
30 Pulsed 25
20
20
15 ID = 5.5 A 10
5
5
0 0.1 1 10 100
0 0 5 10 15 20
ID - Drain Current - A
VGS - Gate to Source Voltage - V
4
Data Sheet G16421EJ1V0DS
PA2782GR
RDS(on) - Drain to Source On-state Resistance - m
DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE
40 Pulsed
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
10000
Ciss, Coss, Crss - Capacitance - pF
35 30 25 20 15 10 V 10 5 0 - 50 VGS = 4.0 V 4.5 V
V GS = 0 V f = 1 MHz
1000 C iss
C oss 100 C rss
0
50
100
150
10 0.01
0.1
1
10
100
Tch - Channel Temperature - C
VDS - Drain to Source Voltage - V
SWITCHING CHARACTERISTICS
1000
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
30 6 ID = 11 A 25 VDD = 24 V 15 V 6V 5
VDS - Drain to Source Voltage - V
VDD = 15 V VGS = 10 V RG = 10 100
20 VGS
4
td(off) 10 td(on) tf tr
15
3
10 VDS 5
2
1
1 0.1 1 10 100
0 0 2 4 6 8
0
ID - Drain Current - A
QG - Gate Charge - nC
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
100 100000 10000 1000
SOURCE TO DRAIN DIODE REVERSE CURRENT
IF - Diode Forward Current - A
125C 10
TA = 25C
IR - Reverse Current - A
VDS = 30 V 100 10 1 0.1 0.01 - 50 24 V
1
VGS = 0 V Pulsed 0.1 0 0.2 0.4 0.6 0.8 1 1.2
0
50
100
150
VF(S-D) - Source to Drain Voltage - V
Tj - Junction Temperature - C
Data Sheet G16421EJ1V0DS
5
VGS - Gate to Source Voltage - V
td(on), tr, td(off), tf - Switching Time - ns
PA2782GR
* The information in this document is current as of April, 2003. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. * No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Electronics. NEC Electronics assumes no responsibility for any errors that may appear in this document. * NEC Electronics does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC Electronics products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Electronics or others. * Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of a customer's equipment shall be done under the full responsibility of the customer. NEC Electronics assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. * While NEC Electronics endeavors to enhance the quality, reliability and safety of NEC Electronics products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC Electronics products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment and anti-failure features. * NEC Electronics products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to NEC Electronics products developed based on a customerdesignated "quality assurance program" for a specific application. The recommended applications of an NEC Electronics product depend on its quality grade, as indicated below. Customers must check the quality grade of each NEC Electronics product before using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots. "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support). "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of NEC Electronics products is "Standard" unless otherwise expressly specified in NEC Electronics data sheets or data books, etc. If customers wish to use NEC Electronics products in applications not intended by NEC Electronics, they must contact an NEC Electronics sales representative in advance to determine NEC Electronics' willingness to support a given application. (Note) (1) "NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its majority-owned subsidiaries. (2) "NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as defined above).
M8E 02. 11-1

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